View FMBM5401_1240905.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FMBM5401 PNP General Purpose Amplifier
FMBM5401
PNP General Purpose Amplifier
* This device has matched dies in SuperSOT-6.
C2 E1 C1
B2 E2 pin #1 B1
SuperSOTTM-6
Mark: .4S2
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, TSTG
Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Value
-150 -160 -5.0 -600 -55 ~ 150
Units
V V V mA C
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Electrical Characteristics
Symbol
Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE1 DIVID1 hFE2 DIVID2 hFE3 DIVID3
TC = 25C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
Conditions
IC = -1.0mA, IB = 0 IC = -100A, IE = 0 IC = -10A, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100C VEB = -3.0V, IC = 0 VCE = -5V, IC = -1mA hFE1(Die1)/hFE1(Die2) VCE = -5V, IC = -10mA hFE2(Die1)/hFE2(Die2) VCE = -5V, IC = -50mA hFE3(Die1)/hFE3(Die2)
Min.
-150 -160 -5.0
Max
Units
V V V
-50 -50 -50
nA A nA
On Characteristics* DC Current Gain Variation Ratio of hFE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE2 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE3 Between Die 1 and Die 2 50 0.9 60 0.95 50 0.9 1.1 1.1 240 1.05
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMBM5401 Rev. A
FMBM5401 PNP General Purpose Amplifier
Electrical Characteristics (Continued)
Symbol
VCE(sat) VBE(sat) VBE(on) DEL
TC = 25C unless otherwise noted
Parameter
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Difference of VBE(on) Between Die1 and Die 2 Current Gain Bandwidth Product Output Capacitance Noise Figure
Conditions
IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VCE = -5V, IC = -10mA VBE(on)(Die1)-VBE(on)(Die2) VCE = -10V, IC = -10mA f = 100MHz VCB = -10V, IE = 0, f = 1MHz VCE = -5.0V, IC = -250A, RS = 1.0K, f = 10Hz to 15.7KHz
Min.
-0.2 -0.5
Max
V V -1 -1 -1
Units
V V V mV
-8
8
Small Signal Characteristics fT Cob NF 100 300 6.0 8.0 MHz pF dB
* Pulse Test: Pulse Width 300ms, Duty Cycle 2.0%
Thermal Characteristics T
Symbol
PD RJA Total Device Dissipation
C
= 25C unless otherwise noted
Parameter
Thermal Resistance, Junction to Ambient, Total
Value
700 180
Units
mW C/W
* Device mounted on a 1 in 2 pad of 2 oz coppe
2 FMBM5401 Rev. A
www.fairchildsemi.com
FMBM5401 PNP General Purpose Amplifier
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs Collector Current
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Collector-Emitter Saturation Voltage vs Collector Current
0.4
hFE - TYPICAL PULSED CURRENT GAIN
200
VCE = 5V
= 10
150
0.3
125 C
o
100
0.2
o
25 C 125 C
o
25 C
o
50
- 40 C
o
0.1
- 40 C
1 10 100
o
0 1E-4
1E-3
0.01
0.1
1
0.0 0.1
IC - COLLECTOR CURRENT (A)
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage vs Collector Current
1.0
Figure 4. Base-Emitter On Voltage vs Collector Current
VBC(ON) - BASE-EMITTER ON VOLTAGE (V)
1.0
VBESAT - BASE-EMITTER VOLTAGE (V)
0.8
- 40 C 25 C
o
o
0.8
- 40 C 25 C
o
o
0.6
0.6
125 C
o
125 C
o
1 10
0.4
0.4
= 10
100
VCE = 5V
0.2 0.1
0.2 0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 5. Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA) 100
V CB = 10 0V
Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base
BV CER - BREAKDOWN VOLTAGE (V)
Between Emitter-Base
220 210
10
1
200
190
0.1
180
25
50 75 100 125 T A - AM BIENT TE MPE RATURE (C)
150
170 0.1
1
RESISTANCE (k )
10
100
1000
3 FMBM5401 Rev. A
www.fairchildsemi.com
FMBM5401 PNP General Purpose Amplifier
Typical Performance Characteristics
Figure 7.Input and Output Capacitance vs Reverse Voltage
hFE - TYPICAL PULSED CURRENT GAIN
200
(Continued)
VCE = 5V
150
125 C
o
100
25 C
o
50
- 40 C
o
0 1E-4
1E-3
0.01
0.1
1
IC - COLLECTOR CURRENT (A)
4 FMBM5401 Rev. A
www.fairchildsemi.com
FMBM5401 PNP General Purpose Amplifier
Mechanical Dimensions
SuperSOTTM-6
Dimensions in Millimeters
5 FMBM5401 Rev. A
www.fairchildsemi.com
FMBM5401 PNP General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
6 FMBM5401 Rev. A
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FMBM5401

	To Download FMBM5401 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .